法国专利FR3038441A1

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专利摘要:
Embodiments of the present invention generally relate to nonvolatile memory and, more particularly, nonvolatile memory having adjustable cell bit patterns. In one embodiment, an adjustable memory cell is provided. The memory cell generally comprises a gate electrode, at least one recording layer and a channel layer. The channel layer is generally capable of supporting a depletion region and is disposed between the gate electrode and the at least one recording layer. In this embodiment, upon activation of the gate, the channel layer may be depleted and the current initially flowing through the channel may be directed through the at least one recording layer.
公开号:FR3038441A1
申请号:FR1656146
申请日:2016-06-30
公开日:2017-01-06
发明作者:Luiz M Franca-Neto；Kurt Allan Rubin
申请人:HGST Netherlands BV；
IPC主号:

专利说明:

NON-VOLATILE MEMORY WITH ADJUSTABLE SHAPE OF BITS OF
FIELD OF THE INVENTION [0001] Embodiments of the present invention generally relate to a non-volatile memory, and more specifically, embodiments described herein relate to the storage of multiple bits in a non-volatile memory cell. and adjusting the size and / or shape of the multiple bits.
Description of the Prior Art [0002] There are today a number of different memory technologies for storing information for use in computer systems. These different memory technologies can generally be divided into two main categories, namely volatile memory and non-volatile memory. Volatile memory may generally designate types of computer memory that require power supply to maintain the stored data. Nonvolatile memory, on the other hand, can generally designate types of computer memory that do not require power supply in order to preserve the stored data. Examples of types of volatile memory include certain types of random access memory (RAM), such as dynamic RAM (DRAM) and static RAM (SRAM). Examples of types of nonvolatile memory include ROM, flash memory, such as NOR (NAND) and NAND (NAND) flash memories, and so on.
[0003] In recent years, there has been a demand for higher density (capacity) devices, which have a relatively low cost per bit, for use in high capacity storage applications. Today, the memory technologies that typically dominate the computer industry are DRAM and NAND flash memory; however, these memory technologies may not be able to meet the current and future capacity demands of next-generation computer systems.
[0004] A number of emerging technologies have recently attracted increasing attention as potential contenders for the next generation of memory type. Some of these emerging technologies include phase change memory (PCM), resistive RAM (known by the abbreviation ReRAM or RRAM) and others. For simplicity, Resistive RAM will be referred to as ReRAM throughout this booklet.
[0005] PCM is a type of non-volatile memory technology that operates on the basis of the switching of a memory cell, generally based on chalcogenides such as Ge2Sb2Tes, between two stable states, namely a crystalline state and a amorphous state. Switching between the two states can be enabled by heating the memory cell, this being generally done by applying an electric current through the PCM cell. ReRAM, which shares some similarities with the PCM in that they both operate through state-dependent resistance mechanisms, is also a type of nonvolatile memory technology that typically stores data in the form of using variations of electrical resistance.
[0006] These different emerging memory technologies can all be serious contenders for dislodging NOR and NAND semiconductor flash storage applications and, in the case of NAND flash memory, SSDs (SSDs). As a result, it may be desirable to provide techniques that can be used to achieve higher capacity in non-volatile memory while minimizing the cost per bit.
SUMMARY OF THE INVENTION
[0007] Systems, methods, and devices of the invention each have several aspects, none of which alone is responsible for its desirable attributes. Without limiting the scope of the present invention as expressed by the following claims, certain features will now be described briefly. After reviewing this presentation, and in particular after reading the section entitled "Detailed Description", it will be understood how the features of the present description provide benefits which include, among other things, adjustment / control of the size and / or the form of the bit (s) stored in a non-volatile memory cell.
Some aspects of the present invention generally relate to a non-volatile memory, and more particularly, a non-volatile memory with adjustable shapes of the cell bits.
An embodiment of the present invention provides an adjustable nonvolatile memory cell. The memory cell generally comprises a gate, at least one record layer, and one channel layer. The channel layer is generally disposed between the grid and the at least one recording layer. In addition, the channel layer may be able to support a depletion region and a current may initially pass through the channel. Upon activation of the gate, the channel layer may be depleted and the current initially flowing through the channel may be directed (or deflected) through the at least one recording layer. In addition, a part of the at least one recording layer can be transformed from a first resistance state into a second resistance state, based on the current directed through the at least one recording layer, and at least one of a size or shape of the transformed portion may be controlled to store at least one bit.
Another embodiment of the present invention provides a method for recording one or more bits in at least one memory cell. The method may generally include applying a current to a channel layer of the memory cell, and activating a gate of the memory cell by applying a voltage to the gate of the memory cell. The method may also include, upon activation of the gate, depleting the channel layer to channel current from the channel layer to a recording layer of the memory cell, wherein the recording layer is in a first state of resistance. The method may further include transforming at least a portion of the recording layer of the first resistance state into a second resistance state to write one or more bits in the recording layer, wherein the first state of resistance and the second state of resistance are different, and wherein at least one of a size or shape of the at least one transformed portion of the recording layer is controlled, in part, by the voltage applied to the grid and by the current applied to the channel layer.
[0011] Yet another embodiment of the present invention provides a system. The system may generally include a plurality of memory cells and a processor configured to address each of the plurality of memory cells. By way of example, for each of the plurality of memory cells, the processor may generally be configured to apply a current to a channel layer of the memory cell and activate a gate of the memory cell by applying a voltage at the gate of the memory cell. The processor can also generally, when activating the gate, channel the current of the channel layer to a recording layer of the memory cell, wherein the recording layer is in a first state of resistance. . The processor may further be capable of transforming at least a portion of the recording layer from a first resistance state into a second resistance state to write one or more bits in the recording layer, wherein the first state of resistance and the second state of resistance are different, and wherein at least one of a size or shape of the at least one transformed portion of the recording layer is controlled, in part, by the voltage applied to the gate and by the current applied to the channel layer.
BRIEF DESCRIPTION OF THE DRAWINGS
In order that the manner in which the above-mentioned features of the present invention can be understood in detail, a more specific description of the invention, briefly summarized above, may be obtained with reference to embodiments of the invention. , some of which are illustrated in the accompanying drawings. It will be appreciated, however, that the accompanying drawings illustrate only some typical embodiments of the present invention and should therefore not be construed to limit the scope of the present invention, as the invention may admit other equally effective embodiments. .
Fig. 1 illustrates a block diagram of an exemplary processing system in accordance with embodiments of the present invention.
Figure 2 illustrates an exemplary architecture of a memory cell, according to embodiments of the present invention.
Fig. 3 is a flowchart of exemplary operations that may be used to register multiple bits in a memory cell, in accordance with embodiments of the present invention.
Figures 4A-4C illustrate various control examples of the size and / or shape of a registered bit, in accordance with embodiments of the present invention.
Figures 5A-5C illustrate various control examples of the size and / or shape of a registered bit, in accordance with another embodiment of the present invention.
Figure 6 illustrates an exemplary architecture of a memory cell chain, in accordance with embodiments of the present invention.
Figures 7A-7C illustrate an example of how a memory cell string may be programmed, in accordance with embodiments of the present invention.
Figure 8 illustrates an exemplary architecture of a memory cell having a recording layer capable of supporting a depletion region, in accordance with embodiments of the present invention.
Fig. 9 is a graph illustrating an exemplary coding of resistance topologies for a memory cell, in accordance with embodiments of the present invention.
Fig. 10 illustrates an exemplary architecture of a memory cell having multiple phase change layers in accordance with embodiments of the present invention.
For a better understanding, identical reference numerals are used when possible, to designate identical elements common to the figures. It should be noted that the elements described in one embodiment can be advantageously used in other embodiments without being specifically mentioned again.
DETAILED DESCRIPTION
According to various aspects of the present invention, the techniques, apparatus, systems, etc., described herein can generally be used to store multiple bits in memory cell (s), for example, on the basis of a sequence of voltage (and current) profiles having a controlled amplitude and time width that are applied to the memory cell (s). In addition, the techniques described herein can generally be used to control the size and / or shape of a region of a recording material (e.g., a phase change material, a ReRAM material, etc.). ) which is transformed from one state to another and has a state-dependent resistance. By way of example, as will be described in more detail below, the size of a transformed region may in part be controlled by using a gate (of a memory cell) to control the position at which a current between enter and exit the recording layer.
Various aspects of the invention are described in more detail below with reference to the accompanying drawings. This description, however, may be implemented in many different forms and should not be construed as being limited to any specific structure or function presented throughout this specification. On the contrary, these elements are provided so that this description is exhaustive and complete, and that it best highlights the scope of the invention for the skilled person. On the basis of the teachings of this document, one skilled in the art will understand that the scope of the invention is considered to cover all aspects of the invention described herein, whether it is implemented independently of any other aspect of the invention. invention or in association therewith. For example, a device may be implemented or a method may be practiced using any number of the aspects presented herein. In addition, the scope of the invention is considered to cover an apparatus or a process which is realized by means of another structure, another functionality or a structure and an additional functionality replacing the various aspects of the invention presented here. It should be understood that any aspect of the invention described herein may be implemented by one or more elements of a claim.
The term "given by way of example" is used here to mean "serving as an example, case or illustration". All of the aspects described herein as "exemplary" need not be interpreted as being preferred or advantageous over other aspects. It should be noted that the figures described here may not be drawn to scale and may not indicate actual or relative size.
Figure 1 is a block diagram illustrating an example of a processing system 100 in which one or more of the embodiments of the present invention may be used and / or implemented. By way of example, as will be described in more detail below, the processing system 100 may comprise one or more memory cells (for example as illustrated in FIGS. 2, 6, 8, 10-11, etc.). ) and may be configured to store one or more bits (e.g. as shown in Figures 4A-4C, 5A-5C, etc.) in each of said one or more memory cells using the techniques presented herein.
As illustrated, the processing system 100 may comprise a processor 102, a storage device (for example, a memory) 104, a line decoder 106, and a column decoder 108. The storage device 104 may comprise a plurality of memory cells (not shown), which can be arranged as a matrix of rows and columns. The processor 102 can interface with the memory cell array (in the storage device 104) via the row decoder 106 and the column decoder 108. In one example, the individual memory cells can be programmed or queried via an arrangement of word lines (WL, Word Lines) and bit lines (BL, Bit Lines). The WLs can extend along the rows of the matrix and the BLs can extend along the columns of the matrix. An individual memory cell may be present at a junction between the WLs and the BLs. In another example, a memory cell string (e.g. as illustrated in FIGS. 6-7) may also be programmed or queried via the arrangement of WL and BL. In general, during a read / write cycle, the line decoder 106 can select (for example via a selection device) a line of memory cells in which a write is made or from which a read is done. Similarly, the column decoder 108 may select (for example, through a selection device) a memory cell column address for the read / write cycle. Examples of selection devices include transistors (for example a Field Effect Transistor (FET), a bipolar junction type transistor (BJT, Bipolar).
Junction Transistor), etc.), diodes, etc. Some examples of transistors may include metal oxide transistors (MOS), etc. The transistor may be made of polysilicon.
According to various embodiments, each of the memory cells within the storage device 104 may comprise any type of memory cell that has a state-dependent resistor, so that data may be stored in the cell based on the particular state of the memory cell. By way of example, in some embodiments, each of the memory cells may comprise a phase change memory (PCM) cell, a resistive RAM (ReRAM) cell, and so on. According to various embodiments, each of the memory cells of the storage device 104 may comprise any type of memory cell that is capable of storing data based on the magnetic polarization of storage elements within the cells, such as a magnetic RAM (MRAM, Magnetic RAM), etc.
Figure 2 illustrates an architecture of a memory cell 200 in accordance with various embodiments of the present invention. The memory cell 200 may be an example of one of a plurality of memory cells within the storage device 104. As illustrated, the memory cell 200 may comprise a gate electrode 202, an insulating layer 204, a cahal layer 206, a recording layer 208, and a substrate layer 210. The substrate layer 210 may be a type of a material having a relatively low electrical conductivity as compared to the recording layer, among which materials such as oxides and nitrides such as SiOx, SiNx, C, AlOx, or other material of low electrical conductivity. The substrate layer 210 could also be a material having a melting temperature greater than the melting temperature of the recording layer material and act as a separating layer between two change-over recording layer materials. phase. In general, the material for the substrate layer 210 could be any material on which a recording layer (e.g., a recording layer 208) can be deposited. In a further embodiment (not shown), the substrate could be a spacer layer that separates two recording layers. For the case of the PCM memory, the spacer layer would be selected from materials having a melting temperature higher than the melting temperature of the PCM memory. The spacer layer could be made of a material such as TiN or polysilicon. The conductivity of the spacer layer would be selected to allow a large amount of channel current to pass through the spacer layer, but without shorting the other recording layers.
The gate electrode 202 may be part of a selection device, such as a transistor, a diode, or the like, which may be used for addressing the memory cell 200. for example, if the selection device is a three-terminal selection device, such as a transistor, the gate electrode 202 of the transistor can be connected to one of a plurality of WLs, the drain electrode and the source electrode of the transistor being respectively connected to the BL and the ground. In addition, although not shown, alternatively or additionally, in some embodiments, a gate electrode may also be included below the recording layer.
The channel layer 206 may comprise any type of semiconductor material (such as, for example, polysilicon, or silicon) capable of supporting a depletion region and may be undoped, n-type or p-type. . Doping can be produced by an implantation step. In general, when a voltage (or a current) is applied (e) to the gate electrode 202, an electric current can flow (for example through the channel layer 206) from the source to the drain of the transistor. The amount of electric current flowing may be a function of the voltage (or current) applied to the gate electrode 202. Depending on whether the selection device (for example a transistor) is designed as a selection device With enrichment mode or depletion mode, a zero voltage applied to the gate electrode 202 relative to the source will allow a current to flow from the source to the drain. A depletion mode transistor, for example, may allow a current to flow from the source to the drain (for example through the channel 206) with a zero voltage from the gate to the source, while the current flow (to through the channel 206) is blocked by changing the gate voltage to some other finite value. The current may then flow from the drain electrode through the recording layer 208 of the memory cell 200. The recording layer may be any material that experiences resistance variation when a current is passed through. through the recording layer. This includes the class of phase change materials and RRAM. Phase change materials include TeGeSb of various compositions. RRAM materials include metal oxides such as SiOx, TaOx, TiOx, HfOx, NiOx, NbOx, ScOx, ErOx, YOx, ZrOx and other metal oxides, metal nitrides such as SiNy, TaNy, TiNy, and the like. other metal nitrides as well as composite layers containing one or more layers of an oxide or nitride. The RRAM material may also have more constituents than a binary material. For example, it could be a material with ternary or quaternary composition. The recording layer could also contain mobile ionic species such as Ag. As will be described in more detail below, in general, the intensity of current that can pass through the recording layer 208 may in part be controlled by the voltage (or current) level applied to the grid 202.
The insulating layer 204 can separate the gate electrode 202 and the channel layer 206, and, in general, can be used to prevent (or reduce) the current (channeled through the channel layer 206) of pass in the opposite direction through the gate electrode 202 (for example when the channel layer is depleted). Examples of materials that can be used for the insulating layer 204 include various materials of oxide, nitride or other materials such as silicon oxide, silicon nitride, aluminum oxide, oxide hafnium, zirconium oxide, or carbon.
The recording layer 208 may be able to support a number of different non-volatile memory types. For example, the recording layer 208 may be compatible with memory types that have state-dependent resistance, such as different types of PCM memory, different types of ReRAM, and others. In another example, the recording layer 208 may be compatible with types of memory that are capable of supporting one or more polarizing magnetic fields (for example with one or more magnetic tunnel junction layers (MTJ)), such as MRAM, etc.
According to certain embodiments, for the PCM memory, the phase change materials that can be used in the recording layer 208 may comprise any of the germanium-antimony (GeSb), the germanium-tellurium ( GeTe), Sb2Te3, Ge2Te2Te5, or compositions containing germanium-antimony-tellurium (GeSbTe or GST), and alloys thereof as well as materials in which other materials such as Sn are added. Other PCM materials include Ga-Sb, Mg-Sb, ΓΑΙ-Sb, ΓΑΙ-Sb-Te, materials containing flax, Ga, Te, Ge, Sb, or Bi, and other chalcogenides. Each of these phase change materials can generally have one or more different material properties (electrical and / or thermal), which can provide one or more improvements over conventional nonvolatile types of memory. For example, the recording layer 208 may comprise different types of single phase phase change materials, phase separation alloys, slower crystalline alloys of higher viscosity, and the like. The single phase of the alloys can provide high erase rates, and the phase separation alloys and the slower crystalline alloys of higher viscosity may have lower melting temperatures and / or longer crystalline times, which may offer better performance. ability to read / write cycles.
According to certain embodiments, for the ReRAM, the materials that can be used in the recording layer 208 may comprise any materials that use filaments and / or oxygen vacancies to implement a failover. resistance between different states. According to some embodiments, for ReRAM, the materials that can be used in the recording layer 208 may comprise metal oxides such as Hf-O, Ta-O, Ti-O, Ni-O, Nb-O, Sc-O, Er-O, YO, Zr-O or other metal oxides. In some embodiments, the layer 208 may further be subdivided into a set of layers of various thicknesses and be made of various materials comprising different metal oxides having different compositions or different constituents. The metal oxide layer 208 may include, but is not limited to, a binary oxide or a ternary oxide. The layer 208 may also represent one or more layers constituting CBRAM type materials such as Cu or Ag in a matrix containing Cu.
For clarity, certain aspects of the techniques are described hereinafter for the PCM memory, and the PCM terminology is used in a large part of the description presented hereinafter. However, it should be noted that the techniques described hereinafter can also be used for other materials that have state-dependent resistance, such as ReRAM, etc.
As mentioned above, in general, data storage in a phase change material is accomplished by heating the phase change material until the phase change material is reset to a state. of high resistance (amorphous) or positioned in a state of low resistance (crystalline). Referring, for example, to the memory cell 200, due to the application of a voltage to the gate electrode 202, the current that is diverted to the phase change material in the recording layer 208 can produce thermal energy that can cause the phase change material to transition between states. Generally, to pass the phase-change material to the amorphous state, a large-amplitude reset pulse (e.g., greater than the melting temperature of the phase-change material) and of short duration can be applied to the phase change to melt the phase change material (eg molten state) and allow the phase change material to cool rapidly so that the phase change material is left in a disordered state amorphous. To pass the phase change material to the crystalline state, a positioning pulse (of sufficient magnitude to be greater than the glass transition temperature of the phase change material) may be applied to the material to be changed. and can be maintained for a time sufficient to allow the phase change material to crystallize into an ordered resistance state. In some embodiments, the high resistance state may be used to store a data bit at "0" and the low resistance state may be used to store a data bit at "1".
In general, one or more techniques described herein can be used to obtain a three-dimensional memory in a two-dimensional recording medium (such as a recording layer 208). By way of example, as will be described in more detail below, in contrast to the construction of multiple successive recording layers (as is generally done in conventional recording methods), the techniques presented here allow to store multiple bits in a single recording medium layer, for example by applying a sequence of current signals having a controlled amplitude and / or time width, and controlling (or adjusting) the size and / or shape of the a bit region recorded in the recording medium to obtain 3D volumetric support.
FIG. 3 illustrates, for example, operations 300 that can be used to record (or write, store, program, etc.) multiple bits in at least one memory cell, such as the memory cell 200, in accordance with various embodiments of the present invention.
The operations can begin at 302, where an electric current can be applied to a channel layer of the memory cell. By way of example, according to some embodiments, the channel layer of the memory cell may be a semiconductor material capable of supporting a depletion region. At 304, the gate of the memory cell can be activated by applying a voltage to the gate of the memory cell. At 306, when the gate is activated, the channel may be depleted in order to channel the current of the channel layer to a recording layer of a memory cell, wherein the recording layer is in a channel. first state of resistance (for example an amorphous state). For example, in one embodiment, depending on the magnitude of the voltage applied to the gate, a portion of the channel layer may be depleted (i.e. electrons may be depleted through the part of the channel layer so that said part is not able to conduct electricity) by forcing (or by deviating, for example because of the Coulomb law) the passage of the current in the layer of recording.
In 308, a portion of the recording layer may be transformed from the first resistance state into a second resistance state to write one or more bits in the recording layer, wherein the first resistance state. and the second state of resistance are different. In one embodiment in which the recording layer is for example a phase change material, a portion of the recording layer may undergo a transition from a first state of resistance to a second state of resistance due to heating produced by the current applied to the channel layer and diverted to the recording layer. In some cases (for example for a phase change material), the first state of resistance may be an amorphous state, the second state of resistance may be a crystalline state and the transition from the amorphous state to the crystalline state may be realized by applying a positioning current pulse. In other cases, (for example if referring back to a phase change material), the first state of resistance may be the crystalline state, the second state of resistance may be an amorphous state, and the transition from the crystalline state to the amorphous state can be achieved by applying a reset current pulse. In yet other cases, the first resistance state and the second resistance state may be one of a plurality of intermediate states, depending on the particular properties of the phase change material used in the recording layer. By way of example, as described above, different alloys of a phase change material may have different material properties, such as glass transition temperatures, melting point temperature, and the like. which can affect the orders of magnitude between the states of resistance.
According to some embodiments, at least one of the size and shape of the at least one transformed portion may in part be controlled by the voltage applied to the gate and the current applied to the layer. of channel. By way of example, as will be described in more detail below, depending on the size and / or shape of each of the at least one transformed part, different levels can be obtained, allowing for multibit recording.
In one embodiment of the present invention, controlling the size and / or shape of said one or more bits in the recording layer may be to control the width of each transformed portion of the layer of recording. FIGS. 4A-4C illustrate, for example, an example of how three different recording levels (with three different widths of the recorded regions) can be obtained, in part, by controlling the voltage and / or the current applied to the recording cell. memory according to an embodiment of the present invention. Each of the memory cells shown in Figs. 4A-4C, respectively, may be an example of the memory cells depicted in Figs. 2, 8, 11, etc.
As illustrated in FIGS. 4A-4C, voltage (pulse) signals 402A, 402B, 402C and write current signals (pulses) 404A, 404B, 404C may be used to control the width of the recorded bits 406A, 406B, and 406C, respectively, in each of the memory cells. According to this embodiment, the width of the recorded bit regions 406A, 406B, and 406C (in each of the memory cells) can be controlled by applying constant voltage signals to the gate of the memory cell and varying the write current signals that are applied to the memory cell channel.
In one example, a bit of small width, of width wi (for example at a level), may be recorded (as illustrated in FIG. 4A) by applying a voltage signal 402A of constant amplitude to the gate of FIG. the memory cell and applying a write current signal 404A of low amplitude. In another example, a bit of average width, of width W2 (for example at a second level), may be recorded (as illustrated in FIG. 4B) by applying a voltage signal 402B of constant amplitude to the grid of the memory cell and applying a write current signal 404B of average amplitude. In yet another example, a wide bit of width W3 (for example at a third level) may be recorded (as illustrated in FIG. 4C) by applying a voltage signal 402C of constant amplitude to the gate of FIG. the memory cell and applying a write current signal 404C of high amplitude. In general, by applying a constant gate voltage and varying the current (for example as shown in FIGS. 4A-4C), it is possible to record over the entire depth of the recording layer for parts of the recording layer that are directly below the grid. However, when the current passes through the recording layer to penetrate portions that are not directly below the gate, the current may not penetrate as deeply, allowing the use of regions of different widths ( as the transformed regions 406A-406C).
Although the voltage signals 402A-C and the write current signals 404A-C are represented in the form of square pulses, the voltage signals 402A-C and the write current signals 404A- C may also be in the form of a number of pulses of different shapes (such as triangular shape, etc.). In addition, although not shown, the amplitude and / or the time width of the write voltage and current signals can both be controlled.
In one embodiment of the present invention, controlling the size and / or shape of said one or more bits in the recording layer may consist of controlling the depth of each transformed portion of the layer of recording.
FIGS. 5A-5C illustrate another example of how multiple (for example three) different recording levels (having recorded regions of three different widths) can be obtained, in part, by controlling the voltage and or the current applied to the memory cell, in accordance with another embodiment of the present invention. Each of the memory cells respectively shown in Figures 5A-5C, may be an example of the memory cells shown in Figures 2, 8, 11, etc.
As illustrated in FIGS. 5A-5C, voltage (pulse) signals 502A, 502B, 502C and write current signals (pulses) 504A, 504B, 504C may be used to control the depth of the recorded bits 506A, 506B, and 506C, respectively, in each of the memory cells. According to this embodiment, the depth of the recorded bit regions 506A, 506B and 506C (in each of the memory cells) can be controlled by varying the amplitude and / or the time width of voltage signals applied to the gate of the memory cell and varying the amplitude and / or the time width of write current signals applied to the channel of the memory cell. The fact of thus varying the amplitude and / or the time width of the voltage and current signals makes it possible to obtain a finer control level (for example compared to controlling only the write current) on each part of the recording layer which is transformed into a different resistance state.
As illustrated (for example in FIG. 5A), a shallow bit having a depth di (for example at a level) can be recorded by applying the voltage signal 502A and the write current signal 504A. As illustrated in FIG. 5B, an average depth bit having a depth d2 may be recorded by applying the voltage signal 502B and the write current signal 504B. In one example, the voltage signal 502B may be different (i.e. it may vary in amplitude, shape, time width, etc.) of the voltage signal 502A. By way of example, the voltage signal 502B may have an amplitude and / or a time width different from the voltage signal 502A. In one example, the write current signal 504B may be different from the write current signal 504A. By way of example, the write current signal 504B may also have a different amplitude and / or time width than the write current signal 04A.
As illustrated in FIG. 5C, a maximum depth bit having a depth d3 may be recorded by applying the voltage signal 502C and the write current signal 504C. In one example, the voltage signal 502C may be different (e.g. may vary in amplitude, shape, time width, etc.) of the voltage signal 502B and the voltage signal 502A. Similarly, the write current signal 504C may also be different from the write current signal 504B and the write current signal 504A.
In addition, although this is not shown in FIGS. 5A-5C, the techniques presented here can also make it possible to control the depth of the different regions 506A-506C by applying a constant current signal to each of the memory cells. while varying the voltage applied to each of the memory cells.
Although the voltage signals 502A-C and the write current signals 504A-C are represented in the form of square pulses, the voltage signals 502A-C and the write current signals 504A Can also be in the form of a number of pulses of different shapes (such as of triangular shape, of different temporal width, etc.). Further, although each of the memory cells shown in Figs. 4A-4C and 5A-5C generally have a single-bit recorded region (e.g., for one bit), the techniques presented here can also be applied to more one bit (for example two bits, three bits, etc.).
As mentioned above, in some examples, the storage device (for example, shown in FIG. 1) may comprise an array of memory cells having one or more memory cells connected in a chain. A string, as used herein, can refer to two or more cells that are connected linearly.
For example, FIG. 6 illustrates an architecture of a chain 600 of memory cells, in accordance with various embodiments of the present invention. As illustrated, a chain of three memory cells (e.g., memory cell 602, 604 and 606), in which each memory cell 602, 604 and 606 has its own gate, can be connected in such a way that each memory 602, 604 and 606 can share at least one of the insulating layer, the channel layer, the recording layer and the substrate. The insulating layer, the channel layer, the recording layer and the substrate (shown in FIG. 6) can respectively be examples of the insulating layer 204, the channel layer 206, the recording layer 208 and of the substrate 210 shown in FIG. 2. As a result, the materials that can be used for the insulating layer, the channel layer, the recording layer and the substrate (shown in FIG. 6) can respectively be identical to the materials used. for the insulating layer 204, the channel layer 206, the recording layer 208 and the substrate 210 of Figure 2.
In some embodiments, the materials used for the insulating layer, the channel layer, the recording layer and / or the substrate (shown in FIG. 6) may be identical for each of the memory cells in the In other embodiments, the materials used for the insulating layer, the channel layer, the recording layer, and / or the substrate may be different for each of the memory cells in the channel 600. Referring to the recording layer of Figure 6, for example, in some cases, the use of identical materials (or different) for the recording layer for each of the memory cells in the chain can better control the different states of resistance that can be obtained between the different cells. For example, in some cases, for PCM memory, different alloys of a phase change material (such as GST) can be used for the different recording layers.
As mentioned above, in some embodiments, the techniques presented herein allow recording bit regions of different sizes and / or shapes for each memory cell in a memory cell chain. By way of example, referring to the chain 600, the techniques presented here can be used to record a bit region for the memory cell 602 which has a size and / or shape different from a bit region recorded for the memory cell 604 and the memory cell 606.
In one embodiment, the programming (or writing) in each of the memory cells 602, 604, and 606 can be performed sequentially (i.e., level by level) in order to record a bit region of different size and / or shape for each of the memory cells 602, 604 and 606 (in a chain 600). The sequential write may include programming one memory cell at a time by disabling the grids of any of the other memory cells in the chain that is not being programmed at the current time. In general, when a current is applied to the channel of a memory cell chain, the current will be diverted to the recording layer only in the memory cell whose gate is activated (for example by applying a gate voltage). For the remaining memory cells (for example, in which zero voltage is applied to the gate), the current will continue to flow through the channel.
As illustrated in FIG. 7A, for example, in one case, a bit region 702 may be recorded first in the memory cell 602 (for example, by turning off the gates of the memory cells 604 and 606) by applying a voltage signal to the gate of the memory cell 602 and applying a write current signal to the channel. As illustrated in FIG. 7B, after the recording of the bit region 702, a bit region 704 may be stored in the memory cell 604 (for example by disabling the gates of the memory cells 602 and 606) by applying a voltage signal at the gate of the memory cell 604 and applying a write current signal to the channel. Finally, as shown in Fig. 7C, after the recording of the bit region 704, a bit region 706 may be stored in the memory cell 606 (for example by disabling the gates of the memory cells 602 and 604 ) by applying a voltage signal to the gate of the memory cell 606 and applying a write current signal to the channel. However, in general, the recording of each memory cell by this sequential method can continue for any number of memory cells that can be connected in a chain.
In the embodiment shown in FIGS. 7A-7C, bit regions of different size and / or shape 702, 704 and 706 can be obtained for each of the memory cells 602, 604 and 606 in the chain. 600 using the techniques described above with reference to Figures 4A-4C and 5A-5C. By way of example, as described above, different widths of the bit regions 702, 704 and 706 can be obtained by applying the same voltage to the memory cells (when enabled) and varying the current signal. applied to the channel for each of the memory cells. In another example, as described above, different depths for the bit regions 702, 704 and 706 can be obtained by varying (or applying) the different gate voltages and the different write currents to each of the memory cells. In still another example, different depths for bit regions 702, 704 and 706 can be obtained by applying a constant write current signal to the channel for each of the memory cells and varying the gate voltages applied to each of the memory cells.
In another embodiment (not shown), the programming (or writing) in each of the memory cells 602, 604, and 606 can be performed in parallel (or simultaneously) in order to save bit regions of different sizes and / or shapes for each of the memory cells 602, 604 and 606 in the string 600. Generally, when the writing is done simultaneously, the current applied to the channel may be identical for each of the memory cells and the gate voltages applied to each of the memory cells may be different. Thus, it is possible to control the depth of each of the bit regions that are stored in the memory cells. In this embodiment, since each of the memory cells can generally be activated (for example by applying a voltage to the gates of each of the memory cells) when the programming of the cells is performed simultaneously and as each of the memory layers Different recording within the memory cells may have different strength orders of magnitude, in some instances a current driver may be used to maintain a constant current across each of the memory cells. In other examples, a feedback circuit (with a mechanism capable of dynamically detecting the current, providing feedback and adjusting the voltage applied to each of the memory cells) can be used to maintain a constant current through each memory cells.
According to various embodiments, the techniques presented herein may also allow one or more bits to be recorded in a layer of recording material (eg a phase change material, a ReRAM, etc.) by extending the depletion zone (from the channel layer) to the recording layer.
For example, FIG. 8 illustrates an exemplary architecture of a memory cell 800 having a recording layer capable of supporting a depletion region, in accordance with various embodiments of the present invention. As illustrated, the memory cell 80 may comprise an oxide layer, which can be used as a type of insulator (for example to prevent the current from going back through the gate of the memory cell 800) and may be similar to the insulating layer 204 shown in FIG. 2. Furthermore, the memory cell 800 may comprise a channel layer and a substrate, both of which may respectively be similar to the channel layer 206 and the substrate 210 shown As an example, the channel layer (of the memory cell 800) may comprise a semiconductor material capable of supporting depletion. The memory cell 800 may further include a recording layer 802 for storing one or more bits. In this embodiment, the recording layer 802 may (in addition to the channel layer) be able to support a depletion region, so that when the gate of the memory cell 800 is activated, a little or no current can flow through a portion of the recording layer that is depleted.
In some embodiments, multiple independent transformed regions (each of which can be used to store a bit) can be created in the recording layer by controlling the depth of the depletion zone in the recording layer. 802. By way of example, as illustrated in FIG. 8, based on the voltage signals (in the sequence of voltage signals 808) applied to the gate of the memory cell 800, the depth of the area of the depletion in the recording layer (which may for example comprise a phase change material) may be controlled so that it extends to a first depletion extension 804 and a second depletion extension 806 (represented by broken lines in Figure 8). Due to the depletion to a first depletion extension 804 and a second depletion extension 806, the current applied to the memory cell 800 (for example with the current signal sequence 810) can be used to transforming respectively a first independent region 812 and a second independent region 814 into one of two resistance states. Each region (or part) transformed can correspond to a bit. Thus, in this embodiment, the first independent region 812 can be transformed into one (of the two) resistance states to store a bit and the second independent region 814 can be transformed into one (of the two) states of resistance to store another bit.
Thus, one or more resistance topologies may be encoded for the memory cell 800. The number of resistance topologies that are encoded may depend on the number of bits stored in the memory cell. By way of example, as illustrated in the graph 900 of FIG. 9, the two bits (for example represented by the independent transformed regions 812 and 814) stored in the memory cell 800 can encode for four different topologies (profiles) in resistance value, each resistance profile being a function of the depth in the recording layer 802. A first resistance profile may represent "00"; a second resistance profile may represent "01"; a third resistance profile can represent "10"; and a fourth resistance profile may represent "11".
In one embodiment, the read and write operation (for example for the memory cell 800) can be performed independently cell by cell. For example, when reading a plurality of memory cells 800, the gate of any individual cell can be individually activated (for example to deflect the read current to the cell) in order to access a particular cell or cell may be invisible while reading another cell (s). When reading the memory cell 800, the entire resistance topology can be read and the two bits can be decoded together. Even if the absolute values of the resistors vary from one cell to another, the decoder can still decode correctly, two bits at a time. This makes it possible to obtain an improved robustness against a variation affecting both the read and / or write operations, allows the subtraction of the interconnection resistor and to correct the variation from one cell to the other, etc. .
Although the memory cell 800 represents two bits stored, the techniques described herein can be used to store more than two bits. The memory cell 800 may be compatible with memory types that make it possible to implement high-speed read operations (such as for example an SRAM). In addition, the techniques described herein can be extended to multi-cell intersymbol interference correction. By way of example, with reference to FIG. 8, the techniques described here make it possible to measure adjacent resistance topologies (for example "00", "01", "10", "11") on either side of the one that it is necessary to detect.
In general, for the various embodiments described here, the process of writing one or more bits in a memory cell (for example with a sequence of voltage and current signals) can be based on an iterative programming algorithm (for example such as a write-check algorithm, a read-check-write algorithm, etc.). The iterative programming algorithm can be used to achieve the desired separation between the different transformed regions (for example either within a single phase change layer, or as will be described hereinafter, between multiple changing layers. different phase).
In some embodiments (not shown), the memory cell 800 may include multiple recording layers for storing one or more bits. Each of the different layers may have different characteristics (for example different material properties) so that when parts of the different layers are transformed and / or shaped (for example by means of the techniques described here), different states resistance can be obtained. In this embodiment, extending the depletion zone (for example on the basis of a voltage applied to the gate of the memory cell) from the channel layer to the multiple layers of a layer layer material. given record (eg phase change), one or more bits can be written in each layer (for example on the basis of current signals diverted to said one or more layers).
In general, (if one refers for example to a phase change material) when programming a memory cell having multiple phase change layers, the programming can be carried out in the order from the deepest phase change layer to the shallow phase change layer. By way of example, in one case, the deepest phase change layer of a memory cell can be programmed first (for example by controlling the depth of the depletion zone in the deepest layer ) and applying a write current signal that transforms a portion of the deepest layer to store a bit. After that, a layer above the deepest layer can be programmed by moving back the depletion zone (for example towards the layer above the deepest layer) and applying a current signal. write that transforms a portion of the layer above the deepest layer to store a bit. This process can continue this way until the depletion zone has feculated to the shallow phase change layer and a write current signal is applied to store a bit in the change layer. the shallow phase. On the other hand, according to some embodiments, multiple bits may be written in each phase change layer, for example using the techniques described above with reference to FIG. 8.
In some cases, when using a memory cell having multiple phase change layers and a channel layer (for example as illustrated in FIG. 8), there may be faults in the channel layer that can limit (or prevent) the control of the depth of the depletion zone in the multiple phase-change layers. As a result, it may be desirable to provide a memory cell architecture capable of taking into account these defect concentrations in the channel layer.
Figure 10 illustrates an architecture of a memory cell 1000 having multiple phase change layers, in accordance with another embodiment of the present invention. As illustrated, the memory cell 1000 may comprise a gate, an oxide layer, and a gate, each of which may be similar to the grids, oxide layers, and substrates of the embodiments described above (e.g. in Figure 2, etc.). However, as is also shown, rather than including a channel layer between the oxide layer and the phase-change layer, the memory cell 1000 may instead comprise a total of N phase-change layers. , PCMo, PCMi, PCM2, PCMN-2, PCMN-i. Each phase change layer may have different properties, for example different programming temperatures, different orders of magnitude of resistance, different electrical conductivities, etc. By way of example, the PCMN-i layer may have the highest order of magnitude of resistance and the lowest conductivity of the different layers, while the PCMo layer may have the smallest order of magnitude of resistance. and the highest conductivity of the different layers. In this embodiment, the PCMo layer can act as a channel layer. In some cases, by using a memory cell (such as the memory cell 1000) that does not have a channel layer, it is possible to reduce the appearance of defects that can limit the control of the depletion zone in the different PCM layers.
In general, the various techniques (for example for storing multiple bits, controlling the size and / or shape of the bits, controlling the depth of depletion, etc.) described herein can be used to improve the volumetric density. different types of nonvolatile memory (such as PCM, ReRAM, etc.). By way of example, as described above, the techniques described herein can be used to convert a 2D plane recording medium to a 3D volumetric medium and / or be used to write multiple bits in a region in which the shape of the region is controlled by a grid. In addition, the techniques described herein can be used to convert a 3D recording medium to a 3D medium that can store multiple bits of information in each cell. This can be applied to both horizontal channel 3D memory and vertical channel 3D memory.
The various techniques described here can also be used to compensate for the variability from one cell to another, to be used to reduce the cost per GB (for example no additional lithography step is necessary to record more than a bit of data in a region) and / or be compatible with memory architectures and storage at low and high read rates.
Although the foregoing relates to embodiments of the present invention, other additional embodiments of the invention may be designed without departing from the basic framework thereof, and its scope is determined by the claims. below.
The various logic blocks, modules and circuits provided by way of illustration and described in connection with the present invention may be implemented or implemented by means of a universal processor, a digital signal processor (DSP). , an Application Specific Integrated Circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate logic or transistor, discrete hardware components, or any combination thereof designed to implement the functions described herein. A versatile processor may be a microprocessor, but alternatively, the processor may be a conventional processor, controller, microcontroller, or any other conventional machine. A processor may also be implemented in the form of a combination of computing devices, for example a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors together with a core DSP, or any other configuration of this type.
The methods described herein comprise one or more steps or actions for the implementation of the method described. The steps and / or actions of the process can be interchanged with each other without departing from the scope of the claims. In other words, unless a specific order of steps or actions is specified, the order and / or use of specific steps and / or actions can be modified without going out. of the scope of the claims.
As used herein, an expression referring to "at least one" of a list of elements refers to any combination of these elements, including the individual elements. By way of example, "at least one of: a, b, c" is considered to cover a, b, c, ab, ac, bc, and abc, as well as any combination with multiple identical elements (eg, aa, aaa, aab, aac, abb, acc, bb, bbb, bbc, cc, and ccc or any other way of ordering a, b, and c).
The various operations of the methods described above can be performed by any appropriate means for performing the corresponding functions. These means may include various hardware and / or software components.
It should be noted that the claims are not limited to the particular configuration and particular components illustrated above. Various modifications, transformations and variations may be applied to the arrangement, operation and details of the methods and apparatus described above without departing from the scope of the claims.

权利要求:
Claims (20)
[1" id="c-fr-0001]
A method for recording one or more bits in at least one memory cell, comprising: applying a current to a channel layer of the at least one memory cell; activate a grid of the at least one memory cell by applying a voltage to the gate of the at least one memory cell; when activating the gate, depleting the channel layer in order to channel the current of the channel layer to a recording layer of the at least one memory cell, wherein the recording layer is in a first state of resistance; and transforming at least a portion of the recording layer of the first resistance state into a second resistance state to write one or more bits in the recording layer, wherein the first resistance state and the second resistance state. are different, and wherein at least one of a size or shape of the at least one transformed portion of the recording layer is controlled, in part, by the voltage applied to the gate and the current applied to the channel layer.
[2" id="c-fr-0002]
The method of claim 1, wherein the recording layer comprises one of a phase change material or a resistive random access memory material.
[3" id="c-fr-0003]
The method of claim 1, wherein transforming the at least a portion of the recording layer to write one or more bits comprises transforming a first portion of the at least one portion into a resistance state and transforming a second portion of the at least one portion into a different resistance state, wherein each transformed portion corresponds to a registered bit.
[4" id="c-fr-0004]
The method of claim 1, wherein controlling the at least one of the size and shape of the at least one transformed portion is to control a width of the at least one transformed portion by applying a voltage. constant at the gate and varying the current applied to the channel layer.
[5" id="c-fr-0005]
The method of claim 1, wherein controlling the at least one of the size or shape of the at least one transformed portion comprises controlling a depth of the at least one transformed portion by varying a voltage applied to the gate of the at least one memory cell and varying a current applied to the channel of the at least one memory cell.
[6" id="c-fr-0006]
The method of claim 1, wherein the at least one memory cell comprises a plurality of memory cells connected in a chain.
[7" id="c-fr-0007]
The method of claim 6, further comprising: writing sequentially to each of the plurality of memory cells one by one by disabling any unregistered memory cell gates.
[8" id="c-fr-0008]
The method of claim 6, further comprising: writing simultaneously to each of the plurality of memory cells by applying a constant current signal and varying the voltage applied to each of the plurality of memory cells.
[9" id="c-fr-0009]
The method of claim 1, further comprising, upon activation of the gate,: extending the depletion of the channel layer in the recording layer of the at least one memory cell; and controlling a depth of the depletion extension in the recording layer, based on the voltage applied to the gate, to write one or more bits.
[10" id="c-fr-0010]
The method of claim 9, further comprising: encoding a plurality of resistance topologies based on a number of said one or more written bits in the recording layer.
[11" id="c-fr-0011]
The method of claim 1, wherein controlling the at least one of the size or shape of the at least one transformed portion comprises controlling a depth of the at least one transformed portion by varying at least one of a time during which a voltage is applied to the gate of the at least one memory cell and a time during which a current is applied to the channel of the at least one memory cell.
[12" id="c-fr-0012]
An adjustable nonvolatile memory cell, comprising: a gate; at least one recording layer; and a channel layer, capable of supporting a depletion region, disposed between the gate and the at least one recording layer, wherein a current initially flows through the channel layer, wherein, at the activating the gate, the channel layer is depleted and the current initially flowing through the channel layer is directed through the at least one recording layer, wherein a portion of the at least one recording layer can be transformed from a first resistance state into a second resistance state, based on the current directed through the at least one recording layer, and wherein at least one of a size or a shape of the transformed portion may be controlled to store at least one bit.
[13" id="c-fr-0013]
An adjustable non-volatile memory cell according to claim 12, wherein a plurality of portions of the at least one recording layer can be transformed from a first resistance state into a second resistance state, based on a sequence of current signals directed through the at least one recording layer, and wherein at least one of a size or shape of each of the plurality of transformed portions can be controlled to store a plurality of bits.
[14" id="c-fr-0014]
The adjustable nonvolatile memory cell of claim 13, wherein a width of each of the plurality of transformed portions can be controlled by a constant voltage applied to the gate and a variable current sequence applied to the channel layer.
[15" id="c-fr-0015]
The adjustable nonvolatile memory cell of claim 13, wherein a depth of each of the plurality of transformed portions can be controlled by a variable current sequence applied to the channel layer and a variable voltage applied to the gate.
[16" id="c-fr-0016]
The adjustable nonvolatile memory cell of claim 12, wherein the at least one recording layer is capable of supporting a depletion region.
[17" id="c-fr-0017]
The adjustable nonvolatile memory cell of claim 16, wherein a plurality of portions of the at least one recording layer can be transformed from a first resistance state into a second resistance state based on a second resistance state. extending a depth of the depletion region in the at least one recording layer.
[18" id="c-fr-0018]
The adjustable nonvolatile memory cell of claim 12, wherein the at least one recording layer comprises at least one of a phase change material and a resistive random access memory material.
[19" id="c-fr-0019]
The adjustable nonvolatile memory cell of claim 12, wherein the at least one recording layer comprises a plurality of layers, each layer having different material properties.
[20" id="c-fr-0020]
A system, comprising: a plurality of memory cells; a processor configured for addressing each of the plurality of memory cells, wherein, for each of the plurality of memory cells, the processor is configured to: apply a current to a channel layer of the memory cell; activate a grid of the memory cell by applying a voltage to the grid of the memory cell; when activating the gate, channeling the stream of the channel layer to a recording layer of the memory cell, wherein the recording layer is in a first state of resistance; and transforming at least a portion of the recording layer of the first resistance state into a second resistance state to write one or more bits in the recording layer, wherein the first resistance state and the second resistance state. are different, and wherein at least one of a size or shape of the at least one transformed portion of the recording layer is controlled, in part, by the voltage applied to the gate and by the current applied to the channel layer.

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公开号 | 公开日

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US14/788,167|US9472281B1|2015-06-30|2015-06-30|Non-volatile memory with adjustable cell bit shape|

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